V:YAG
V:YAG crystal, also known as V-doped yttrium aluminium garnet crystal, with the chemical formula of V3+:Y3Al5O12. It is a new laser saturable absorber and passive Q-switch crystal product with good comprehensiveness.
It is widely used in laser plotters, rangefinders, laser cutting machines, and other fields. In the passive Q-switched solid-state laser, the laser has the advantages of good stability, long life, miniaturization, simplicity, and practicality.
Element V has four chemical valences: +2, +3, +4 and +5. V3+ ions with +3 valence are commonly used as Q-switches and saturable absorption ions.
They are doped into YAG matrix crystals to achieve passive Q-switches and laser mode-locking. V:YAG crystal is a new material of laser saturable absorber and passive Q-switch, and its wavelength range is 1.06 μm – 1.44 μm.
Particularly applicable to 1.3 μm Nd laser. It is an excellent saturable absorber at 1300 nm.
Features of V:YAG Crystal:
- The service life is long
- Excited state absorption
- High damage threshold
- Recovery time is short
- High degree of saturation for 1.3μm
Attributes
| Attribute | Numerical |
| Chemical Formula | V3+:Y3Al5O12 |
| Crystal Structure | Cubic– la3dn> |
| Orientation | <100> <+/-0.5° |
| Transmittance | 30%-97% |
| Optical Density | 0.1-0.8 |
| Atomic Transition Structure | Two-stage System |
| Recovery Time | 5~22 ×10-22 s |
| Concentrations | (0.05~0.35) wt% |
| Ground State Absorption Cross Section | 7.2 x 10-18 cm2 |
| Excited State Absorption Cross Section | 7.4 x 10-19 cm2 |
| Transmit Bandwidth | 1000-1450 nm |
| Central Absorption Wavelength | 1300 nm |
| Coating | Standard coating is AR with R |
| < 0.2%(@1340 nm) | |
| Absorption Coefficient | 1.0cm-1 – 7.0cm-1 |
| Damage Threshold | >500MW/cm2 |
Polishing
| Attribute | Numerical |
| Orientation Tolerance | < 0.5° |
| Thickness/Diameter Tolerance | ±0.05 mm |
| Surface Roughness | <λ/8@632 nm |
| Wavefront Distortion | <λ/4@632 nm |
| Surface Finish | 5-Oct |
| Parallelism | 30〞 |
| Perpendicularity | 15ˊ |
| Clear Aperture | >90% |
| Chamfer | <0.2×45° |
| HR Coating | <= 0.2% (@ 1340nm) |
spectrum
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References
| [1] Afternoon T . Cleo 2000 / tuesday afternoon. 2000. |
| [2] Lagatsky A A , Abdolvand A , Kuleshov N V . Diode-pumped passively Q-switched Yb:KGW laser with V:YAG saturable absorber[J]. Filtration Industry Analyst, 2000. |
| [3] Conroy R S , Malyarevich A M , Kemp A J , et al. V:YAG as passive Q-switch at 1342 nm and 1064 nm[C]// Technical Digest. Summaries of Papers Presented at the Conference on Lasers and Electro-Optics. Conference Edition. 1998 Technical Digest Series, Vol.6 (IEEE Cat. No.98CH36178). IEEE, 2002. |
| [4] Xin L , Li G , Zhao S , et al. The influence of thermal lens effect on pulse repetition rate in diode-pumped passively Q-switched Nd:GdVO4/V:YAG laser[J]. Optics & Laser Technology, 2012, 44(4):929-934. |
| [5] Song T , Li P , Chen X , et al. Passively Q-switched Nd:GYSGG laser operating at 1.3 μm with V:YAG as saturable absorber[J]. Optik – International Journal for Light and Electron Optics, 2016, 127(22):10621-10625. |
| [6] Xue Q H , Quan Z , Bu Y K , et al. LD-pumped passively Q-switched Nd:YVO 4 /LBO red laser with V:YAG[J]. Optics & Laser Technology, 2006, 38(7):540-543. |
| [7] Xin L , Li G , Zhao S , et al. Diode-pumped passively Q-switched Nd:Lu x Y 1 x VO 4 laser at 1.34 μm with two V:YAG saturable absorbers[J]. Optics Communications, 2011, 284(5):1307-1311. |
| [8] Janousek J , Tidemand-Lichtenberg P , Mortensen J L , et al. Investigation of passively synchronized dual-wavelength Q-switched lasers based on V:YAG saturable absorber[J]. Optics Communications, 2006, 265(1):277-282. |
| [9] Xu Q J . Characteristics and optical spectra of V:YAG crystal grown in reducing atmosphere[J]. Journal of Crystal Growth, 2006. |
| [10] Xu J L , Huang H T , He J L , et al. The characteristics of passively Q-switched and mode-locked 1.06 μm Nd:GdVO 4 laser with V:YAG saturable absorber[J]. Optical Materials, 2010, 32(4):522-525. |
| [11] Ma J , Li Y , Sun Y , et al. Diode-pumped passively Q-switched Nd:GdVO4 laser at 1342nm with V:YAG saturable absorber[J]. Optics Communications, 2009, 282(5):958-961. |
| [12] Ma J , Li Y , Sun Y , et al. Passively Q-switched 1.32-μm Nd:YAG laser with a V:YAG saturable absorber[J]. Laser Physics, 2008, 18(4):393-395. |
| [13] Podlipensky A V , Yumashev K V , Kuleshov N V , et al. Passive Q-switching of 1.44μm and 1.34μm diode-pumped Nd:YAG lasers with a V:YAG saturable absorber[J]. Applied Physics B, 2003, 76(3):245-247. |
| [14] Malyarevich A M , Denisov I A , Yumashev K V , et al. V:YAG – a new passive Q-switch for diode-pumped solid-state lasers[J]. Applied Physics B, 1998, 67(5):555-558. |
| [15] T, OmatsuK, MiyamotoM,等. 1.3-μm passive Q-switching of a Nd-doped mixed vanadate bounce laser in combination with a V:YAG saturable absorber[J]. Applied physics, 2010. |
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